標題: Semiconductor device
作者: Chang Yi
Chang Chia-Hua
Lin Yueh-Chin
Chen Yu-Kong
Shie Ting-En
公開日期: 27-May-2014
摘要: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.
官方說明文件#: H01L029/15
H01L021/336
URI: http://hdl.handle.net/11536/104373
專利國: USA
專利號碼: 08735904
Appears in Collections:Patents


Files in This Item:

  1. 08735904.pdf