標題: Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
作者: Chen, Wei-Ren
Chang, Ting-Chang
Liu, Po-Tsun
Yeh, Jui-Lung
Tu, Chun-Hao
Lou, Jen-Chung
Yeh, Ching-Fa
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 20-Aug-2007
摘要: The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.
URI: http://dx.doi.org/10.1063/1.2760144
http://hdl.handle.net/11536/10425
ISSN: 0003-6951
DOI: 10.1063/1.2760144
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 8
結束頁: 
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