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dc.contributor.authorYang, Chieh-Kaien_US
dc.contributor.authorYang, Chia-Mingen_US
dc.contributor.authorLiao, Hua-Hsienen_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.date.accessioned2014-12-08T15:13:29Z-
dc.date.available2014-12-08T15:13:29Z-
dc.date.issued2007-08-27en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2759951en_US
dc.identifier.urihttp://hdl.handle.net/11536/10417-
dc.description.abstractA comprehensive numerical model is established for the electrical processes in a sandwich organic semiconductor device with high carrier injection barrier. The charge injection at the anode interface with 0.8 eV energy barrier is dominated by the hopping among the gap states of the semiconductor caused by disorders. The Ohmic behavior at low voltage is demonstrated to be not due to the background doping but the filaments formed by conductive clusters. In bipolar devices with low work function cathode it is shown that near the anode the electron traps significantly enhance hole injection through Fowler-Nordheim tunneling, resulting in rapid increases of the hole carrier and current in comparison with the hole-only devices. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleCurrent injection and transport in polyfluoreneen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2759951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue9en_US
dc.citation.epageen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000249156100129-
dc.citation.woscount6-
Appears in Collections:Articles


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