標題: Current injection and transport in polyfluorene
作者: Yang, Chieh-Kai
Yang, Chia-Ming
Liao, Hua-Hsien
Horng, Sheng-Fu
Meng, Hsin-Fei
物理研究所
Institute of Physics
公開日期: 27-八月-2007
摘要: A comprehensive numerical model is established for the electrical processes in a sandwich organic semiconductor device with high carrier injection barrier. The charge injection at the anode interface with 0.8 eV energy barrier is dominated by the hopping among the gap states of the semiconductor caused by disorders. The Ohmic behavior at low voltage is demonstrated to be not due to the background doping but the filaments formed by conductive clusters. In bipolar devices with low work function cathode it is shown that near the anode the electron traps significantly enhance hole injection through Fowler-Nordheim tunneling, resulting in rapid increases of the hole carrier and current in comparison with the hole-only devices. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2759951
http://hdl.handle.net/11536/10417
ISSN: 0003-6951
DOI: 10.1063/1.2759951
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 9
結束頁: 
顯示於類別:期刊論文


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  1. 000249156100129.pdf