標題: Effective density-of-states distribution of polycrystalline silicon thin-film transistors under hot-carrier degradation
作者: Lee, Ming-Hsien
Chang, Kai-Hsiang
Lin, Horng-Chih
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-2007
摘要: In this work, quantitative information for nonuniform hot-carrier degradation, especially under mild stressing condition, is investigated. A test structure capable of revealing hot-carrier degradations of polycrystalline silicon (poly-Si) thin-film transistors in specific portions of the channel is employed. Effective density-of-states (DOS) distributions at the damaged sites can be extracted using field-effect conductance method, thus providing an effective tool to evaluate the impact of hot-carrier degradations. By measuring along individual sections of the channel, it becomes possible to extract the DOS for the device as a whole. The combination of the proposed test structure and DOS extraction technique also provides a powerful tool for modeling and simulating current-voltage characteristics of thin-film transistors under hot-carrier stressing. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2777804
http://hdl.handle.net/11536/10401
ISSN: 0021-8979
DOI: 10.1063/1.2777804
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 102
Issue: 5
結束頁: 
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