標題: New techniques for simulation of ion implantation by numerical integration of Boltzmann transport equation
作者: Wang, SW
Guo, SF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: non-uniform energy grid;nuclear scattering cross-section;Boltzmann transport equation
公開日期: 1-一月-1998
摘要: New techniques for more accurate and efficient simulation of ion implantations by a stepwise numerical integration of the Boltzmann transport equation (BTE) have been developed in this work. Instead of using uniform energy grid, a non-uniform grid is employed to construct the momentum distribution matrix. A more accurate simulation result is obtained for heavy ions implanted into silicon. In the same time, rather than utilizing the conventional Lindhard, Nielsen and Schoitt (LNS) approximation, an exact evaluation of the integrals involving the nuclear differential scattering cross-section (d sigma(n) = 2 pi p dp) is proposed. The impact parameter p as a function of ion energy E and scattering angle phi is obtained by solving the magic formula iteratively and an interpolation techniques is devised during the simulation process. The simulation time using exact evaluation is about 3.5 times faster than that using the Littmark and Ziegler (LZ) spline fitted cross-section function for phosphorus implantation into silicon.
URI: http://hdl.handle.net/11536/104
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 37
Issue: 1
起始頁: 299
結束頁: 302
顯示於類別:期刊論文


文件中的檔案:

  1. 000071972400063.pdf