標題: A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory
作者: Chen, Shih-Ching
Chang, Ting-Chang
Liu, Po-Tsun
Wu, Yung-Chun
Lin, Po-Shun
Tseng, Bae-Heng
Shy, Jang-Hung
Sze, S. M.
Chang, Chun-Yen
Lien, Chen-Hsin
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: nanowire (NW);nonvolatile memory;polysilicon (poly-Si);silicon-oxide-nitride-oxide-silicon (SONOS);thin-film transistor (TFT)
公開日期: 1-Sep-2007
摘要: In this letter, a polycrystalline silicon thin-film transistor consisting of silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage (V-th), and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.
URI: http://dx.doi.org/10.1109/LED.2007.903885
http://hdl.handle.net/11536/10382
ISSN: 0741-3106
DOI: 10.1109/LED.2007.903885
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 9
起始頁: 809
結束頁: 811
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