標題: Novel low-temperature polysilicon thin-film transistors with a self-aligned gate and raised source/drain formed by the damascene process
作者: Chang, Kow Ming
Lin, Gin Min
Yang, Guo Liang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: damascene process;four masks;on/off current ratio;polycrystalline silicon thin-film transistor (poly-Si TFT);raised source/drain (RSD);self-aligned gate;thin channel
公開日期: 1-Sep-2007
摘要: In this letter, a novel structure of the polycrystalline silicon thin-film transistors (TFTs) with a self-aligned gate and raised source/drain (RSD) formed by the damascene process has been developed and investigated. Comparing with the conventional coplanar TFT, the proposed RSD TFT has a remarkable lower OFF-state current (177 to 6.29 nA), and the ON/OFF current ratio is only slightly decreased from 1.71 x 10(7) to 1.39 x 10(7). Only four photomasking steps are required. This novel structure is an excellent candidate for further high-performance large-area device applications.
URI: http://dx.doi.org/10.1109/LED.2007.903313
http://hdl.handle.net/11536/10381
ISSN: 0741-3106
DOI: 10.1109/LED.2007.903313
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 9
起始頁: 806
結束頁: 808
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