Title: Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
Authors: Chao, TS
Liaw, MC
Chu, CH
Chang, CY
Chien, CH
Hao, CP
Lei, TF
Department of Electronics Engineering and Institute of Electronics
Issue Date: 16-Sep-1996
Abstract: The mechanism of the nitrogen co-implant to suppress the boron penetration in p(+)-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF, combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties. (C) 1996 American Institute of Physics.
URI: http://hdl.handle.net/11536/1038
ISSN: 0003-6951
Volume: 69
Issue: 12
Begin Page: 1781
End Page: 1782
Appears in Collections:Articles