標題: Study of the gate-sensing and channel-sensing transient analysis method for monitoring the charge vertical location of SONOS-type devices
作者: Du, Pei-Ying
Lue, Hang-Ting
Wang, Szu-Yu
Lai, Erh-Kun
Huang, Tiao-Yuan
Hsieh, Kuang-Yeu
Liu, Rich
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: charge density;silicon-oxide-nitride-oxide-silicon (SONOS);transient analysis;trapping dynamics;vertical location
公開日期: 1-Sep-2007
摘要: The gate-sensing and channel-sensing transient analysis method is studied in detail. This method introduces an additional gate-sensing capacitor to be compared with the conventional channel-sensing one. Sensing in both modes provides two equations that are suitable to solve for two variables-the charge density (Q) and the average charge vertical location (x). In this paper, the principle of this method is discussed in detail. Several factors that affect the measurement accuracy are also analyzed. The power of this method is demonstrated by program/erase cycling and data retention tests. This method is indeed a powerful tool for detailed understanding of trapping dynamics.
URI: http://dx.doi.org/10.1109/TDMR.2007.907290
http://hdl.handle.net/11536/10353
ISSN: 1530-4388
DOI: 10.1109/TDMR.2007.907290
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 7
Issue: 3
起始頁: 407
結束頁: 419
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