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dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorLai, Yi-Shengen_US
dc.contributor.authorShye, Der-Chien_US
dc.contributor.authorChou, Chen-Chiaen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.contributor.authorJuan, Chuan-Pingen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:13:19Z-
dc.date.available2014-12-08T15:13:19Z-
dc.date.issued2007-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.6727en_US
dc.identifier.urihttp://hdl.handle.net/11536/10296-
dc.description.abstractThe pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) films on Pt/SiO2/Si at low substrate temperatures (T-s, ranging from 300 to 450 degrees C, has been investigated. The PLD PSrT films prepared at low Ts exhibit ferroelectric proper-ties, good crystallinity, and no significant interdiffusion between the PSrT film and the Pt bottom electrode. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. PSrT films grown at appropriate T, yield fewer interface states and fewer trapping states, leading to a smaller leakage current. The enhanced (100) preferred orientation of PSrT films deposited at T-s= 350-400 degrees C exhibits optimum ferroelectricity. In addition, the dielectric constant and ferroelectricity are associated with the preferred orientation. This shows that the electrical characteristics strongly rely on the preferred orientation and trapping states, which could be controlled by varying the substrate temperature (T, <= 450 degrees C during PLD.en_US
dc.language.isoen_USen_US
dc.subjectferroelectricen_US
dc.subjectlead-strontium-titanateen_US
dc.subjectlaser ablation (pulsed laser deposition)en_US
dc.subjectdeposition temperature (substrate temperature)en_US
dc.titleDependence of ferroelectric characteristics on the deposition temperature of (Pb,Sr)TiO3 filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.6727en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue10Aen_US
dc.citation.spage6727en_US
dc.citation.epage6732en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000250266800055-
dc.citation.woscount1-
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