標題: Dependence of ferroelectric characteristics on the deposition temperature of (Pb,Sr)TiO3 films
作者: Wang, Jyh-Liang
Lai, Yi-Sheng
Shye, Der-Chi
Chou, Chen-Chia
Chiou, Bi-Shiou
Juan, Chuan-Ping
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ferroelectric;lead-strontium-titanate;laser ablation (pulsed laser deposition);deposition temperature (substrate temperature)
公開日期: 1-Oct-2007
摘要: The pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) films on Pt/SiO2/Si at low substrate temperatures (T-s, ranging from 300 to 450 degrees C, has been investigated. The PLD PSrT films prepared at low Ts exhibit ferroelectric proper-ties, good crystallinity, and no significant interdiffusion between the PSrT film and the Pt bottom electrode. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. PSrT films grown at appropriate T, yield fewer interface states and fewer trapping states, leading to a smaller leakage current. The enhanced (100) preferred orientation of PSrT films deposited at T-s= 350-400 degrees C exhibits optimum ferroelectricity. In addition, the dielectric constant and ferroelectricity are associated with the preferred orientation. This shows that the electrical characteristics strongly rely on the preferred orientation and trapping states, which could be controlled by varying the substrate temperature (T, <= 450 degrees C during PLD.
URI: http://dx.doi.org/10.1143/JJAP.46.6727
http://hdl.handle.net/11536/10296
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.6727
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 10A
起始頁: 6727
結束頁: 6732
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