標題: Injection-locked Galnp/GaAs HBT frequency divider with stacked transformers
作者: Wei, Hung-Ju
Meng, Chinchun
Chang, Yuwen
Huang, Guo-Wei
電信工程研究所
Institute of Communications Engineering
關鍵字: injection-locked frequency divider (ILFD);stac ked transformer;GalnP/GaAs;heterojunction bipolar transistor
公開日期: 1-Oct-2007
摘要: The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection-locked frequecy divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and separate biasing for base and collector to allow for the larger output swing in the LC tank and obtaining wide locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mV the locking range is 7.8% of the center operating frequency. The chip size of the entire ILFD including probing pads is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals. Inc.
URI: http://dx.doi.org/10.1002/mop.22737
http://hdl.handle.net/11536/10294
ISSN: 0895-2477
DOI: 10.1002/mop.22737
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 49
Issue: 10
起始頁: 2602
結束頁: 2605
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