標題: Characteristics of top-gate polysilicon thin-film transistors fabricated on fluorine-implanted and crystallized amorphous silicon films
作者: Yang, CK
Lei, TF
Lee, CL
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-1996
摘要: This paper presents a comprehensive study on the characteristics of n- and p-channel polycrystalline-silicon (polysilicon) thin-film transistors (TFTs) fabricated on fluorine-implanted-then-crystallized amorphous silicon films. Amorphous silicon films of two thicknesses were implanted with different energies and various dosages of fluorine, and studied using transmission electron microscopy (TEM) and secondary-ion mass spectrometry (SIMS). The electrical characteristics of TFTs fabricated on the films were correlated with the results of TEM and SIMS, It was found that field-effect mobilities of both n- and p-channel devices were improved by the fluorine implantation thanks to the enhanced grain size and the fluorine passivation effect. For the p-channel device, the fluorine implantation did not improve the subthreshold swing and even degraded it after hydrogenation. This result was thought to be caused by the fluorine-induced negative charges in oxides. However, a thin active layer and a deep implantation reduced this degradation.
URI: http://hdl.handle.net/11536/1029
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 143
Issue: 10
起始頁: 3302
結束頁: 3307
顯示於類別:期刊論文


文件中的檔案:

  1. A1996VP02600052.pdf