Title: High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric
Authors: Yang, Ming-Jui
Chien, Chao-Hsin
Lu, Yi-Hsien
Luo, Guang-Li
Chiu, Su-Ching
Lou, Chun-Che
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: hafnium silicate (HfSiOx);high dielectric constant (high-k);polycrystalline-silicon thin-film transistors (poly-Si TFTs)
Issue Date: 1-Oct-2007
Abstract: In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiOx) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiOx. gate dielectric exhibit excellent device performance in terms of higher I-ON/I-OFF current ratio, lower subthreshold swing, and lower threshold voltage (V-th) albeit with slightly higher OFF-state current. More importantly, the mobility of TFTs with HfSiOx gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO2 gate dielectric.
URI: http://dx.doi.org/10.1109/LED.2007.904901
http://hdl.handle.net/11536/10279
ISSN: 0741-3106
DOI: 10.1109/LED.2007.904901
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 10
Begin Page: 902
End Page: 904
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