Title: GaN-based high-Q vertical-cavity light-emitting diodes
Authors: Lu, Tien-Chang
Kao, Tsung-Ting
Kao, Chih-Chiang
Chu, Jung-Tang
Yeh, Kang-Fan
Lin, Li-Fan
Peng, Yu-Chun
Huang, Hung-Wen
Kuo, Hao-Chung
Wang, Shing-Chung
Department of Photonics
Keywords: GaN;light-emitting diode (LED);vertical cavity;vertical-cavity LED (VCLED)
Issue Date: 1-Oct-2007
Abstract: We report a fabrication and demonstration of a GaN-based high-Q vertical-cavity light-emitting diode (VCLED). The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN distributed Bragg reflector (DBR), an eight-pair SiO2/Ta2O5 dielectric DBR (99%), and a three-A optical thickness InGaN/GaN active region. It shows a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 895 at a driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. In addition, this VCLED emission linewidth continues to decrease with an increasing injection current, suggesting a possible realization of GaN-based vertical-cavity surface emitting lasers.
URI: http://dx.doi.org/10.1109/LED.2007.904906
ISSN: 0741-3106
DOI: 10.1109/LED.2007.904906
Volume: 28
Issue: 10
Begin Page: 884
End Page: 886
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