Study on the Key Technologies and Device Structures for the High-Performance Vacuum Microelectronics with the Silicides and Carbon as the Emitters
Due to the development of semiconductor processes and the investigations of nano-scale materials, the technologies and device structures of vacuum microelectronics attracted attentions from many research fields. Although the solid-state devices have many advantages, such as small size, itegratable, and small power consumption, etc., they were limited in the operating speed resulting from the limited electron mobility and limited in output power resulting from the limited breakdown voltage in the junctions in the solid-state devices. If high operating frequency and high output power were required, a vacuum tube with large volume can not be avoided. Therefore, small vacuum microelectronics devices with the ability to integrate with standard semiconductor processes were desired. In this project, vacuum microelectronics devices will be fabricated in semiconductor processes with silicide and carbon materials. Diode- and triode-devices will be realized continuously and the emission characteristics and reliability will also be modified to meet the requirements of good vacuum microelectronics. Finally, the vacuum microelectronics will be integrated with simple solid-state devices on the same substrate. It will be sealed in ultra-high vacuum and tested for the purposes of high frequency, high power, high linearity, ability of vacuum seal, and ability of integrate. Through this project, we hope the researches of vacuum microelectronics in Taiwan can be improved.
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