Ultra High Efficiency III-V Solar Cell
CHANG EDWARD YI
|關鍵字:||epitaxially grown.plasma immersion Si ion implantatio.plasma immersion H ionimplantation.high density plasma deposition SiN cladding layer.flexiblesubstrates.|
The object of this project is to grow strained SiGe, Ge, GaAs, InGaAs, InAs quantum dots, InGaAlP by epitaxially grown on silicon wafer. At last to grow a layer of textured InGaAlP to coarsen, quantum well and multi-junction epitaxy makes solar cell wafers to reach high efficiency whole spectrum absorption. And then combine plasma immersion Si ion implantation in order to raise the concentration of N-type photonics devices, to lower the resistance of junction and plasma immersion H ion implantation, to make dangling bonds of devices passivated, and to deposit high density plasma SiN cladding layer. Finally, let thickness of solar cell wafer thinned to 100um, and then combine flexible substrates to make the highest efficiency of flexible solar cell wafer in the world. Method: (1) Use UHV CVD to grow strained SiGe and Ge, and then use MOCVD to grow InGaAs, InAs quantum dots, InGaAlP, and textured InGaAlP. (2) Use PECVD to precede plasma immersion Si ion implantation, plasma immersion H ion implantation, and ICP high density plasma deposition SiN cladding layer. (3) Use Lithography, etching, and plating process to make photonics devices, and let it to be polished and wet etched, and then make wafer thinned to 100um, then bonding on flexible plastic substrates.
|Appears in Collections:||Research Plans|