標題: Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers
作者: Yang, Hung-Pin D.
Hsu, I-Chen
Lai, Fang-I
Lin, Gray
Hsiao, Ru-Shang
Maleev, Nikolai A.
Blokhin, Sergej A.
Kuo, Hao-Chung
Chi, Jim Yung
光電工程學系
Department of Photonics
關鍵字: broad-area;submonolayer;quantum-dot;VCSEL
公開日期: 1-Oct-2007
摘要: A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.
URI: http://dx.doi.org/10.1143/JJAP.46.6670
http://hdl.handle.net/11536/10259
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.6670
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 10A
起始頁: 6670
結束頁: 6672
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