標題: A new architecture for charge pump circuit without suffering gate-oxide reliability in low-voltage CMOS processes
作者: Wang, Tzu-Ming
Shen, Wan-Yi
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: A new architecture of charge pump circuit without suffering gate-oxide reliability in low-voltage CMOS processes is proposed, which is composed of two identical pumping branches and four-phase clock signals. The four-phase clock signals are designed to have no undesirable return-back leakage path during clock transition and to control the charge transfer MOSFET switches in the proposed circuit to be turned on and off completely. Therefore, its pumping efficiency is higher than that of the conventional one. Because the gate-to-source and gate-to-drain voltages of all devices in the new proposed charge pump circuit do not exceed the normal power supply voltage (VDD), the new proposed charge pump circuit is suitable for applications in low-voltage CMOS processes.
URI: http://hdl.handle.net/11536/10245
http://dx.doi.org/10.1109/ICECS.2007.4510966
ISBN: 978-1-4244-1377-5
DOI: 10.1109/ICECS.2007.4510966
期刊: 2007 14TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-4
起始頁: 206
結束頁: 209
Appears in Collections:Conferences Paper


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