標題: Discrete-dopant-induced characteristic fluctuations in 16 nm multiple-gate silicon-on-insulator devices
作者: Li, Yiming
Hwang, Chih-Hong
電信工程研究所
Institute of Communications Engineering
公開日期: 15-Oct-2007
摘要: The impact of the number and position of discrete dopants on device characteristics is crucial in determining the behavior of nanoscale semiconductor devices. This study explores discrete-dopant-induced characteristic fluctuations in 16 nm single-, double-, triple-, and (square shape) surrounding-gate silicon-on-insulator (SOI) devices. Discrete dopants are statistically positioned in the three-dimensional channel region to examine associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation." An experimentally validated simulation was conducted to investigate the threshold voltage (V-th) fluctuation and the variation of the on- and off-state currents of the four explored structures. The fluctuations of V-th of the double-, triple- and surrounding-gate devices are 2.2, 3.3 and 4 times smaller, respectively, than that of planar SOI. Results of this study provide further insight into the problem of fluctuation and the mechanism of immunity against fluctuation in ultrasmall field effect transistors (FETs) with vertical channel structures, such as fin-typed FETs. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2801013
http://hdl.handle.net/11536/10238
ISSN: 0021-8979
DOI: 10.1063/1.2801013
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 102
Issue: 8
結束頁: 
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