標題: High-resolution MOS magnetic sensor with thin oxide in standard submicron CMOS process
作者: Yang, HM
Huang, YC
Lei, TF
Lee, CL
Chao, SC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS;magnetic sensors;MOS
公開日期: 1-十月-1996
摘要: In this paper, new results obtained with an NMOS magnetic-field sensor made by an industrial 0.8 mu m CMOS process are presented. The major disadvantage of MOS magnetic sensors, a larger noise, can be overcome by the submicron CMOS process with 19 nm gate oxide, The device with W/L=60 mu m/50 mu m biased at saturation region has a resolution of 150 nT (Hz)(-1/2) at 1 kHz and 400 nT (Hz)(-1/2) at 100 Hz, respectively. Even when the device size is scaled down to W/L=6 mu m/5 mu m, the resolution still has the value of 1.5 mu T (Hz)(-1/2) at 1 kHz. The dependence of sensitivity and current-related sensitivity for various bias conditions is discussed in detail and a simple model to explain these trends is established.
URI: http://dx.doi.org/10.1016/S0924-4247(96)01327-1
http://hdl.handle.net/11536/1021
ISSN: 0924-4247
DOI: 10.1016/S0924-4247(96)01327-1
期刊: SENSORS AND ACTUATORS A-PHYSICAL
Volume: 57
Issue: 1
起始頁: 9
結束頁: 13
顯示於類別:期刊論文


文件中的檔案:

  1. A1996WH49000002.pdf