標題: Comparison of Ni-metal induced lateral crystallization thin-film transistors fabricated by rapid thermal annealing and conventional furnace annealing at 565 degrees C
作者: Hu, Chen-Ming
Wu, Yew Chung Sermon
Gong, Jun-Wei
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: RTA;CFA;NILC;polycrystalline silicon;thin-film transistor
公開日期: 1-十一月-2007
摘要: Two annealing methods, pulse rapid thermal annealing (RTA) and conventional furnace annealing (CFA), were used to fabricate nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) at 565 degrees C. It was found that the growth rate of RTA-POLY was 5 times higher than that of CFA-POLY. The performance of RTA-thin-film transistors (TFTs) was not as good as that of CFA-TFT. RTA-TFT showed lower drain current, higher threshold voltage, larger subthreshold swing, lower electron mobility, and lower leakage current than CFA-TFT.
URI: http://dx.doi.org/10.1143/JJAP.46.7204
http://hdl.handle.net/11536/10201
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.7204
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 11
起始頁: 7204
結束頁: 7207
顯示於類別:期刊論文


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