標題: Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
作者: Lin, Chih-Yang
Wu, Chung-Yi
Wu, Chen-Yu
Tseng, Tseung-Yuen
Hu, Chenming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-2007
摘要: The influence of Ti top electrode material on the resistive switching properties of ZrO2-based memory film using Pt as bottom electrode was investigated in the present study. When Ti is used as top electrode, the resistive switching behavior becomes dependent on bias polarity and no current compliance is needed during switching into high conducting state. This phenomenon is attributed to the fact that a series resistance between Ti and ZrO2 film, composed of a TiOx layer, a ZrOy layer, and even the contact resistance, imposed a current compliance on the memory device. Besides, our experimental results imply that switching the device into high conducting state is a field driven process while switching back into low conducting state is a current driven process. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2802990
http://hdl.handle.net/11536/10196
ISSN: 0021-8979
DOI: 10.1063/1.2802990
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 102
Issue: 9
結束頁: 
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