標題: A simple Spacer technique to fabricate poly-Si TFTs with 50-nm nanowire channels
作者: Chang, Chia-Wen
Deng, Chih-Kang
Chang, Hong-Ren
Chang, Che-Lun
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nanowire (NW);polycrystalline silicon (poly-Si);sidewall spacer;thin-film transistors (TFTs);trigatelike structure
公開日期: 1-Nov-2007
摘要: In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a side-wall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications.
URI: http://dx.doi.org/10.1109/LED.2007.906808
http://hdl.handle.net/11536/10179
ISSN: 0741-3106
DOI: 10.1109/LED.2007.906808
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 11
起始頁: 993
結束頁: 995
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