Title: Improved electrical characteristics and reliability of MILC poly-Si TFTs using fluorine-ion implantation
Authors: Chang, Chih-Pang
Wu, YewChung Sermon
Department of Materials Science and Engineering
Keywords: fluorine-ion implantation;metal-induced lateral crystallization (MILC);polycrystalline-silicon thin-film transistors (poly-Si TFTs)
Issue Date: 1-Nov-2007
Abstract: In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high ON/OFF-current ratio. F+-implanted MILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.
URI: http://dx.doi.org/10.1109/LED.2007.906803
ISSN: 0741-3106
DOI: 10.1109/LED.2007.906803
Volume: 28
Issue: 11
Begin Page: 990
End Page: 992
Appears in Collections:Articles

Files in This Item:

  1. 000250524200018.pdf