標題: High-performance short-channel double-gate low-temperature polysilicon thin-film transistors using excimer laser crystallization
作者: Tsai, Chun-Chien
Wei, Kai-Fang
Lee, Yao-Jen
Chen, Hsu-Hsin
Wang, Jyh-Liang
Lee, I-Che
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: double gate (DG);excimer laser crystallization;(ELC);lateral grain growth;thin-film transistor (TFT)
公開日期: 1-Nov-2007
摘要: In this letter, high-performance low-temperature polysilicon thin-film transistors (TFTs) with double-gate (DG) structure and controlled lateral grain growth have been demonstrated by excimer laser crystallization. Via a proper excimer laser condition, along with the a-Si step height beside the bottom gate, a superlateral growth of Si was formed in the channel length plateau. Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics, as compared with the conventional top-gate ones. The proposed DG TFTs (W/L = 1/1 mu m) had the field-effect mobility exceeding 550 cm(2)/V . s, an ON/OFF current ratio that is higher than 10(8), superior short-channel characteristics, and higher current drivability. In addition, the device-to-device uniformity could be improved since grain growth could be artificially controlled by the spatial plateau structure.
URI: http://dx.doi.org/10.1109/LED.2007.908473
http://hdl.handle.net/11536/10176
ISSN: 0741-3106
DOI: 10.1109/LED.2007.908473
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 11
起始頁: 1010
結束頁: 1013
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