標題: 利用氘化及氮化處理製備高可靠性薄閘氧化層深次微米NMOS元件
Highly Reliable Thin Gate Oxide Deep-Submicron N-MOSFET by Deuterium and Nitrogen Treatments
作者: 莊紹勳
Chung Steve S
交通大學電子工程系
關鍵字: 金氧半導體;熱載子可靠性;深次微米;界面特性化;氮化閘極氧化層;氘氣回火製程;MOS;Hot carrier reliability;Deep submicrometer;Interface characterization;Nitrided gate oxide;Deuterium annealing
公開日期: 2000
官方說明文件#: NSC89-2215-E009-045
URI: http://hdl.handle.net/11536/101648
https://www.grb.gov.tw/search/planDetail?id=542146&docId=99594
Appears in Collections:Research Plans


Files in This Item:

  1. 892215E009045.pdf