標題: Structural evolution of silicon oxide nanowires via head-growth solid-liquid-solid process
作者: Hsu, Cheng-Hang
Chan, Shih-Yu
Chen, Chia-Fu
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: silicon oxide;nanowire;rapid cooling
公開日期: 1-十一月-2007
摘要: In this paper, we propose a growth mechanism for silicon oxide nanowires (SiONWs) as a unique solid-liquid-solid process. SiONWs were synthesized in a furnace at 1000 degrees C and cooled at a high rate. Nickel and gold were introduced as catalysts to dissolve and precipitate the silicon oxide originally prepared by wet oxidation. The ratio of nickel to gold determined the precipitation rate and different "octopus-like" structures were formed. At a specific cooling rate, composition and amount of a catalyst, aligned silicon oxide nanowires with unattached ends were obtained.
URI: http://dx.doi.org/10.1143/JJAP.46.7554
http://hdl.handle.net/11536/10149
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.7554
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 11
起始頁: 7554
結束頁: 7557
顯示於類別:期刊論文


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  1. 000251220000084.pdf