Title: Structural evolution of silicon oxide nanowires via head-growth solid-liquid-solid process
Authors: Hsu, Cheng-Hang
Chan, Shih-Yu
Chen, Chia-Fu
材料科學與工程學系
Department of Materials Science and Engineering
Keywords: silicon oxide;nanowire;rapid cooling
Issue Date: 1-Nov-2007
Abstract: In this paper, we propose a growth mechanism for silicon oxide nanowires (SiONWs) as a unique solid-liquid-solid process. SiONWs were synthesized in a furnace at 1000 degrees C and cooled at a high rate. Nickel and gold were introduced as catalysts to dissolve and precipitate the silicon oxide originally prepared by wet oxidation. The ratio of nickel to gold determined the precipitation rate and different "octopus-like" structures were formed. At a specific cooling rate, composition and amount of a catalyst, aligned silicon oxide nanowires with unattached ends were obtained.
URI: http://dx.doi.org/10.1143/JJAP.46.7554
http://hdl.handle.net/11536/10149
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.7554
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 11
Begin Page: 7554
End Page: 7557
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