標題: Improved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrode
作者: Cheng, Chun-Hu
Chiang, Kuo-Cheng
Pan, Han-Chang
Hsiao, Chien-Nan
Chou, Chang-Pin
Mcalister, Sean P.
Chin, Albert
機械工程學系
電子工程學系及電子研究所
Department of Mechanical Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: reliability;high work function;MIM;TiHfO;Ni
公開日期: 1-十一月-2007
摘要: We have studied the reliability of high-K (K similar to 49) TixHf1-xO (x similar to 0.67) metal-insulator-metal (MIM) capacitors after constant voltage stress induction. The use of a high-work-function Ni top electrode improves not only the leakage current, and temperature- and voltage-coefficients of capacitance, but also the long-term capacitance variation after stress induction.
URI: http://dx.doi.org/10.1143/JJAP.46.7300
http://hdl.handle.net/11536/10148
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.7300
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 11
起始頁: 7300
結束頁: 7302
顯示於類別:期刊論文


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  1. 000251220000025.pdf