標題: Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
作者: Wang, Xin Peng
Lim, Andy Eu-Jin
Yu, Hong Yu
Li, Ming-Fu
Ren, Chi
Loh, WeiYip
Zhu, Chun Xiang
Chin, Albert
Trigg, Alastair David
Yeo, Yee-Chia
Biesemans, Serge
Lo, Guo-Qiang
Kwong, Dim-Lee
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: high-kappa gate dielectric;metal gate;MOSFET;work function tuning;(Hf(x)La(1-x))N(y);(ThAl(1-x))N(y)
公開日期: 1-十一月-2007
摘要: A lanthanum (La)-doped HfN is investigated as an n-type metal gate electrode on SiO(2) with tunable work function. The variation of La concentration in (Hf(x)La(1-x))N(y) modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900 degrees C to 1000 degrees C, which makes it suitable for n-channel MOSFET application. An ultrathin high-k dielectric layer was formed at the metal/SiO(2) interface due to the (Hf(x)La(1-x))N(y) and SiO(2) interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a refractory metal nitride for CMOS technology are proposed.
URI: http://dx.doi.org/10.1109/TED.2007.907130
http://hdl.handle.net/11536/10143
ISSN: 0018-9383
DOI: 10.1109/TED.2007.907130
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 54
Issue: 11
起始頁: 2871
結束頁: 2877
顯示於類別:期刊論文


文件中的檔案:

  1. 000250590200009.pdf