High Frequency HEMT Gilbert Mixer and Frequency Divider
|關鍵字:||除頻器;混頻器;快速電子遷移電晶體;微波;毫米波;次諧波;divider;high electron mobility transistor;mixer;microwave;millimeter wave;subharmonic|
應用到HEMT 高頻設計，可以取代傳統的四分之一波長的匹配方式, 這樣一來就不用額
As the wireless communication system develops rapidly, high-electron mobility transistor technology is still used in the microwave and millimeter-wave regimes. The performances of HEMT-based low-noise amplifiers and power amplifiers are superior to those of silicon-based circuits at microwave and millimeter-wave regimes. Thus, HEMT-based LNAs and PAs are not yet replaceable for better performance especially at much higher frequencies. Connections between individual LNAs, PAs, and mixers using different technologies in a module suffer from large loss. It is preferable to implement the front-end circuits with the same process and on the same chip to reduce chip connections at high frequencies. Here, the HEMT technology is the best choice at high-frequency regimes. Many Gilbert complex mixers have been realized using CMOS and SiGe HBT technologies, mostly at low frequencies. Whereas the traditional microwave passive components based on quarter-wavelength design concepts are not compact and consume the real estate in the IC technology, analog circuit design concepts are adopted using HEMT technology in this project than implementing impedance matching design approaches. Furthermore, the frequency divider also uses this design concept to implement and verify. In the future, the HEMT Gilbert mixers and the HEMT analog frequency divider will be integrated in the millimeter-wave transceiver. Our research topic is that the high-frequency passive baluns and RC-CR polyphase quadrature generators are utilized to realize several typical HEMT Gilbert up- and down-converters, which are fundamental, leveled-LO and stacked-LO subharmonic Gilbert mixers. Furthermore, a high-speed regenerative frequency divider is adopted using HEMT technology. If a transceiver is designed with direct-conversion architecture, flicker noise needs to be concerned. The low frequency device flicker noise leaks directly through the down-converter to the IF baseband to degrade the direct conversion receiver. Therefore, the flicker noise reduction mixer circuit is also proposed in this project.
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