標題: Statistical variability in FinFET devices with intrinsic parameter fluctuations
作者: Hwang, Chih-Hong
Li, Yiming
Han, Ming-Hung
傳播研究所
電機工程學系
Institute of Communication Studies
Department of Electrical and Computer Engineering
公開日期: 1-五月-2010
摘要: High-kappa/metal-gate and vertical channel transistors are well-known solutions to continue the device scaling. This work extensively estimates the influences of the intrinsic parameter fluctuations on nanoscale fin-type field-effect-transistors and circuits by using an experimentally validated three-dimensional device and coupled device-circuit simulations. The dominance fluctuation source in threshold voltage, gate capacitance, cut-off frequency, delay time, and power has been found. The emerging fluctuation source, workfunction fluctuation, shows significant impacts on DC characteristics: however, can be ignored in AC characteristics due to the screening effect of the inversion layer. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2010.01.041
http://hdl.handle.net/11536/10122
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.01.041
期刊: MICROELECTRONICS RELIABILITY
Volume: 50
Issue: 5
起始頁: 635
結束頁: 638
顯示於類別:會議論文


文件中的檔案:

  1. 000278728700014.pdf