標題: Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics
作者: Chen, Shih-Ching
Chang, Ting-Chang
Liu, Po-Tsun
Wu, Yung-Chun
Chin, Jing-Yi
Yeh, Ping-Hung
Feng, Li-Wei
Sze, S. M.
Chang, Chun-Yen
Lien, Chen-Hsin
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 5-Nov-2007
摘要: A silicon-oxide-nitride-oxide-silicon type polycrystalline silicon thin-film transistor (poly-Si TFT) with nanowire channels was investigated for both transistor and memory applications. The poly-Si TFT memory device has superior electrical characteristics, such as higher drain current, smaller threshold voltage, and steeper subthreshold slope. Also, the simulation result on electrical field reveals that the electrical field across the tunnel oxide is enhanced and that across the blocking oxide is reduced at the corner regions. This will lead to the parasitic gate injection activity and the erasing speed can be apparently improved in the memory device due to the pronounced corner effect and narrow channel width.
URI: http://dx.doi.org/10.1063/1.2798600
http://hdl.handle.net/11536/10120
ISSN: 0003-6951
DOI: 10.1063/1.2798600
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 19
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000250810300068.pdf