標題: Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands
作者: Chiu, C. H.
Lu, T. C.
Huang, H. W.
Lai, C. F.
Kao, C. C.
Chu, J. T.
Yu, C. C.
Kuo, H. C.
Wang, S. C.
Lin, C. F.
Hsueh, T. H.
光電工程學系
Department of Photonics
公開日期: 7-Nov-2007
摘要: We report the fabrication of InGaN/GaN nanorod light-emitting diodes (LEDs) using inductively coupled plasma reactive-ion etching (ICP-RIE) and a photo-enhanced chemical (PEC) wet oxidation process via self-assembled Ni nanomasks. An enhancement by a factor of six times in photoluminescence (PL) intensities of nanorods made with the PEC process was achieved in comparison to that of the as-grown structure. The peak wavelength observed from PL measurement showed a blue shift of 3.8 nm for the nanorods made without the PEC oxidation process and 8.6 nm for the nanorods made with the PEC oxidation process from that of the as-grown LED sample. In addition, we have demonstrated electrically pumped nanorod LEDs with the electroluminescence spectrum showing more efficiency and a 10.5 nm blue-shifted peak with respect to the as-grown LED sample.
URI: http://dx.doi.org/10.1088/0957-4484/18/44/445201
http://hdl.handle.net/11536/10119
ISSN: 0957-4484
DOI: 10.1088/0957-4484/18/44/445201
期刊: NANOTECHNOLOGY
Volume: 18
Issue: 44
結束頁: 
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