標題: 金屬氫化法製作奈米裂隙---表面傳導電子發射顯示技術應用
Nanogap Fabrication by Hydrogenation---Application of Surface Conduction Electron Emitters Display Technology
作者: 潘扶民
PAN FU-MING
國立交通大學材料科學與工程學系(所)
關鍵字: 表面傳導電子場發射;鈀氫化;奈米裂隙;場發射;surface conduction electron emitter;SCE;palladium hydrogenation;nanogap;field emission
公開日期: 2009
摘要: 我們擬利用鈀(Pd)金屬氫化(palladium hydrogenation)法在Pd 電極上產生奈米裂隙 場發射結構,製作出表面傳導電子發射(surface conductive electron emission,SCE)元件, 探討其於表面傳導電子場發射平面顯示器技術(surface conduction electron emitter display,SED ) 的應用。當氫氣溶入Pd 金屬薄膜後,造成材料體積的增加,產生應變, 導致薄膜斷裂,於是形成了奈米裂隙,裂隙寬度及均勻性與SCE 元件結構設計、氫化 溫度與氫氣壓力有密切關係。本計畫的研究重點內容簡述如下: (一) SCE 元件的製程 步驟相當簡單,利用鍍膜,lift-off 微影與氫化製程便可在SCE 元件上形成奈米尺度的 場發射裂隙,但必須適當設計SCE 元件內Pd 電極薄膜結構與控制氫化條件,我們除 設計製作SCE 元件結構,並將探討最佳化的氫化條件,以形成適當的場發射奈米裂隙。 (二) SED 的顯像效能取決發射自閘極的電子數量,表面物化特性會顯著影響電子發射 效率,我們將進行Pd 電極表面改質,提升電子發射效率,如沉積非晶質碳與氧化銥披 覆層於Pd 電極上。(三)為了達成前兩項工作目標,我們將利用電腦模擬SCE 元件Pd 薄膜電極在氫化條件下的應力分佈,及閘極散射電子的發射軌跡,做為SCE 元件結構 設計與製程的參考。(四)為了探討氫化SCE 元件實際應用於SED 顯示器技術的可行 性,我們將進行SCE 元件的電性量測,點亮測試與可靠性研究。
We have proposed to fabricate a nanogap on the palladium (Pd) electrode, by means of Pd hydrogenation, as the field emitter of the surface conductive electron emission (SCE) device and evaluate the application potential of the fabrication method for surface conduction electron emitter display (SED) technology. As hydrogen gas dissolves in the Pd electrode, stress is produced in the electrode due to volume expansion leading to the formation of a nanogap in the electrode. The size and uniformity of the nanogap strongly depend on the structure configuration of the SCE device and the Pd electrode temperature as well as the hydrogen pressure during the embrittlememt process. The fabrication method is simple and reproducible. The study is grouped into four subtopics: (1) to fabricate suitable nanosized nanogap for SCE devices by optimizing the hydrogen embrittlememt conditions as well as the electrode thin film structure; (2) to perform surface modification of the Pd gate electrode of the SCE device, including hydrogen and oxygen plasma treatments and electrodeposition of IrO2 coating; (3) to perform computer simulation to study the stress distribution in the Pd electrode during Pd hydrogenation and the emission trajectory of electrons emitted from the gate electrode in the electric field building among the Pd cathode, the gate electrode and the anode; (4) to carry out electric measurement and reliability test so that the application potential of the SCE device fabricated by Pd hydrogenation for SED technology can be evaluated.
官方說明文件#: NSC97-2221-E009-016-MY3
URI: http://hdl.handle.net/11536/101063
https://www.grb.gov.tw/search/planDetail?id=1758206&docId=300067
顯示於類別:研究計畫


文件中的檔案:

  1. 972221E009016MY3(第1年).PDF
  2. 972221E009016MY3(第2年).PDF
  3. 972221E009016MY3(第3年).PDF