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dc.contributor.authorLin, Kung-Liangen_US
dc.contributor.authorChang, Edward-Yien_US
dc.contributor.authorHsiao, Yu-Linen_US
dc.contributor.authorHuang, Wei-Chingen_US
dc.contributor.authorLi, Tingkaien_US
dc.contributor.authorTweet, Dougen_US
dc.contributor.authorMaa, Jer-Shenen_US
dc.contributor.authorHsu, Sheng-Tengen_US
dc.contributor.authorLee, Ching-Tingen_US
dc.date.accessioned2014-12-08T15:13:06Z-
dc.date.available2014-12-08T15:13:06Z-
dc.date.issued2007-11-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2818675en_US
dc.identifier.urihttp://hdl.handle.net/11536/10103-
dc.description.abstractHigh quality GaN film was successfully grown on 150 mm Si (111) substrate by metal-organic vapor phase epitaxy method using AlN multilayer combined with graded AlGaN layer as buffer. The buffer layer structure, film quality, and film thickness are critical for the growth of the crack-free GaN film on Si (111) substrate. Using multilayer AlN films grown at different temperatures combined with graded Al(1-x)Ga(x)N film as the buffer, the tensile stress on the buffer layer was reduced and the compressive stress on the GaN film was increased. As a result, high quality 0.5 mu m crack-free GaN epitaxial layer was successfully grown on 6 in. Si substrate. (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleGrowth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2818675en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue22en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000251324600046-
dc.citation.woscount14-
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