標題: Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
作者: Lin, Kung-Liang
Chang, Edward-Yi
Hsiao, Yu-Lin
Huang, Wei-Ching
Li, Tingkai
Tweet, Doug
Maa, Jer-Shen
Hsu, Sheng-Teng
Lee, Ching-Ting
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 26-Nov-2007
摘要: High quality GaN film was successfully grown on 150 mm Si (111) substrate by metal-organic vapor phase epitaxy method using AlN multilayer combined with graded AlGaN layer as buffer. The buffer layer structure, film quality, and film thickness are critical for the growth of the crack-free GaN film on Si (111) substrate. Using multilayer AlN films grown at different temperatures combined with graded Al(1-x)Ga(x)N film as the buffer, the tensile stress on the buffer layer was reduced and the compressive stress on the GaN film was increased. As a result, high quality 0.5 mu m crack-free GaN epitaxial layer was successfully grown on 6 in. Si substrate. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2818675
http://hdl.handle.net/11536/10103
ISSN: 0003-6951
DOI: 10.1063/1.2818675
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 22
結束頁: 
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