|標題:||Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|摘要:||This study reveals the formation of nickel-oxygen-silicon nanoparticles with nonvolatile memory effect by sputtering a commixed target in argon and oxygen ambiance. A transmission electron microscope clearly shows the embedded nanoparticles in the silicon oxide and the constituent was examined by x-ray photoelectron spectroscopy. The capacitor structure with embedded nickel-oxygen-silicon nanoparticles was also studied and it exhibited hysteresis characteristics after electrical operation. The memory window and retention of nickel-oxygen-silicon nanoparticles were enough to apply on nonvolatile memory. In addition, a physical mechanism was deduced to expound the role of oxygen in the formation of nickel-oxygen-silicon nanoparticles. (C) 2007 American Institute of Physics.|
|期刊:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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