標題: Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
作者: Chen, Wei-Ren
Chang, Ting-Chang
Yeh, Jui-Lung
Sze, Simon M.
Chang, Chun-Yen
Chen, Uei-Shin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 26-Nov-2007
摘要: This study reveals the formation of nickel-oxygen-silicon nanoparticles with nonvolatile memory effect by sputtering a commixed target in argon and oxygen ambiance. A transmission electron microscope clearly shows the embedded nanoparticles in the silicon oxide and the constituent was examined by x-ray photoelectron spectroscopy. The capacitor structure with embedded nickel-oxygen-silicon nanoparticles was also studied and it exhibited hysteresis characteristics after electrical operation. The memory window and retention of nickel-oxygen-silicon nanoparticles were enough to apply on nonvolatile memory. In addition, a physical mechanism was deduced to expound the role of oxygen in the formation of nickel-oxygen-silicon nanoparticles. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2816125
http://hdl.handle.net/11536/10102
ISSN: 0003-6951
DOI: 10.1063/1.2816125
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 22
結束頁: 
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