標題: 新穎材料開發計畫---二六族半磁性半導體磊晶核心設施之運作與新穎物理研究
Operation of Core Facility for II-VI Semimagnetic Semiconductor Epitaxy and Study of Novel Physics
作者: 周武清
CHOU WU-CHING
國立交通大學電子物理學系(所)
關鍵字: 分子束磊晶術;二六族化合物半導體;半磁性半導體;碲化鋅;量子點;光激螢光;時間解析光激螢光;氧化鎘鋅;砷化鎵;奈米線;molecular beam epitaxy;II-VI compound semiconductors;semimagnetic semiconductors;ZnTe;quantum dots;photoluminescence (PL);time-resolved PL;ZnCdO;GaAs;nanowire;cathodoluminescence spectroscopy;ZnMgO;Raman scattering;high-pressure techniques
公開日期: 2010
摘要: 以電漿輔助分子束磊晶技術成長各式各樣的二六族半磁性半導體量子結構,提供給國內外物理學家研究新穎的自旋與光電物理外,本研究團隊將對二六族半磁性半導體單量子點自旋物理做深入的研究,並且研究單一量子點於耦合微共振腔中之量子同調操控。
A broad variety of quantum structures made of II-VI compound semiconductors grown by plasma assisted molecular beam epitaxy will support domestic and foreign physicists to study novel spin and photonic physics. In addition, the spin physics of single diluted magnetic quantum dots and the coherent quantum control of single quantum dot coupled to resonant micro-cavity will be studied.
官方說明文件#: NSC99-2119-M009-002
URI: http://hdl.handle.net/11536/100733
https://www.grb.gov.tw/search/planDetail?id=2153608&docId=346892
顯示於類別:研究計畫


文件中的檔案:

  1. 992119M009002.PDF