標題: Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETs
作者: Li, Yiming
Hwang, Chih-Hong
電信工程研究所
Institute of Communications Engineering
關鍵字: bulk fin-typed field-effect transistors (FinFETs);fin angle;manufacturability;metal gate;modeling and simulation;round-top gate
公開日期: 1-Dec-2007
摘要: In this brief, electrical characteristics of 25-nm round-top-gate fin-typed field-effect transistors (FinFETs) on silicon wafers are numerically explored. With an ideal fin angle (i.e., theta = 90 degrees), the FinFETs with doped and undoped (for this case, the device has a metal gate) channels that was fabricated on silicon and silicon-on-insulator wafers are simulated and compared. With a 3-D quantum-correction-transport simulation, characteristic comparison shows that bulk FinFETs with the undoped channel possess promising electrical characteristics. By considering different short-channel effects, dependence of the device performance on the nonideal fin angle and fin height is further investigated. Optimal structure configuration for the round-top-gate bulk FinFETs is thus drawn to show the strategy of fabrication in sub-25-mn MOSFET devices.
URI: http://dx.doi.org/10.1109/TED.2007.908908
http://hdl.handle.net/11536/10040
ISSN: 0018-9383
DOI: 10.1109/TED.2007.908908
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 54
Issue: 12
起始頁: 3426
結束頁: 3429
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