標題: A Cu-based alloyed ohmic contact system on n-type GaAs
作者: Chen, Ke-Shian
Chang, Edward Yi
Lin, Chia-Ching
Lee, Cheng-Shih
Huang, Wei-Ching
Lee, Ching-Ting
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 3-Dec-2007
摘要: An alloyed Pd/Ge/Cu Ohmic contact to n-type GaAs is reported for the first time. The Pd/Ge/Cu Ohmic contact exhibited a very low specific contact resistance of 5.73x10(-7) Omega cm(2) at a low annealing temperature of 250 degrees C. This result is comparable to the reported Pd/Ge and Au/Ge/Ni Ohmic contact systems to n-type GaAs with doping concentrations about 1x10(18) cm(-3). The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu(3)Ge and PdGa(x)As(y) compounds after annealing. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2819687
http://hdl.handle.net/11536/10016
ISSN: 0003-6951
DOI: 10.1063/1.2819687
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 23
結束頁: 
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