標題: Tungsten nanocrystal memory devices improved by supercritical fluid treatment
作者: Chen, C. H.
Chang, T. C.
Liao, I. H.
Xi, P. B.
Tsai, C. T.
Yang, P. Y.
Hsieh, Joe
Chen, Jason
Chen, U. S.
Chen, J. R.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 3-Dec-2007
摘要: A supercritical CO(2) (SCCO(2)) fluid technique is proposed to improve electrical characteristics for W nanocrystal nonvolatile memory devices, since the thickness and quality of tunnel oxide are critical issues for the fabrication of nonvolatile memory devices. After SCCO(2) treatments, C-V curves are restored to normal, as well as the leakage current of W nanocrystal memory devices are reduced significantly. It reveals that W nanocrystal memory devices could be formed with shorter oxidation time, moreover, dangling bonds and trapping states initially created within an incomplete oxidized film will be efficiently repaired after SCCO(2) treatment. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2803937
http://hdl.handle.net/11536/10015
ISSN: 0003-6951
DOI: 10.1063/1.2803937
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 23
結束頁: 
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