標題: Multi-gate non-volatile memories with nanowires as charge storage material
作者: Tsui, Bing-Yue
Wang, Pei-Yu
Chen, Ting-Yeh
Cheng, Jung-Chien
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-2010
摘要: Multi-gate non-volatile memory (NVM) cell is a promising approach in the next generation. In this work, the performance of NVMs using nanocrystals (NCs) and nanowires (NWs) as charge trapping materials were evaluated by three-dimensional simulation. It is found that the NWs located at different positions have different charge injection speeds. And the NW density will strongly affect the charge injection efficiency. The NW at channel center can result in large memory window and acceptable channel controllability. Although the total charges injected into NWs is lower than that injected into NCs under the same programming condition, using NWs as charge trapping material exhibits larger memory window and better channel controllability. It is suggested that the NW is a better choice than NC to be charge storage material from the perspective of memory performance. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2010.01.040
http://hdl.handle.net/11536/10011
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.01.040
期刊: MICROELECTRONICS RELIABILITY
Volume: 50
Issue: 5
起始頁: 603
結束頁: 606
顯示於類別:會議論文


文件中的檔案:

  1. 000278728700006.pdf