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Issue DateTitleAuthor(s)
1996ELO技術在砷化鎵系列光調變器的應用李秉奇; Lee, Bing-Chi; 李建平; Lee Chien-Ping; 電子研究所
2015在照光下蕭基二極體受到鑲嵌在內部的InAs量子點影響的機制與等效電路模型林真豪; Lin, Chen-Hao; 陳振芳; Chen, Jenn-Fang; 電子物理系所
2000無線通訊用2.4V伏特砷化鎵高電子遷移率功率電晶體(Power HEMT)研發計畫張翼; 交通大學材料科學與工程系
2016一維與二維電激發光子晶體面射型雷射之研究徐閺正; 盧廷昌; 光電工程研究所
1-Dec-2006New Cu/Mo/Ge/Pd ohmic contacts on highly doped n-GaAs for InGaP/GaAs heterojunction bipolar transistorsChang, Chun-Wei; Hseh, Tung-Ling; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-2008Characteristics of GaAs transformers for RFIC applicationsMeng, Chinchun; Teng, Ya-Hui; Syu, Jin-Siang; Lin, Yi-Chen; Jhong, Jhin-Ci; Yen, Ying-Chieh; 電信工程研究所; Institute of Communications Engineering
1-Feb-2009Application of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTsChen, Ke-Shian; Chang, Edward Yi; Lin, Chia-Ching; Lee, Cheng-Shih; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2014Ka-Band pHEMT Quadrupler with Injection and Extraction from Oscillator Frequency Doubling PointsChang, Wei-Ling; Meng, Chinchun; Syu, Jin-Siang; Wu, Yan-Feng; Huang, Guo-Wei; 電機工程學系; Department of Electrical and Computer Engineering
2010砷化鎵晶圓接合的界面型態與電性探討鄭筑文; Cheng, Chu-Weng; 吳耀銓; 材料科學與工程學系
1-Dec-2005Ion-channeling studies of InAs/GaAs quantum dotsNiu, H; Chen, CH; Wang, HY; Wu, SC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics