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Issue DateTitleAuthor(s)
1-Jan-2014High Quality Ge Epitaxial Films Grown on In0.51Ga0.49P/GaAs and GaAs Substrates by Ultra High Vacuum Chemical DepositionSu, Yung-Hsuan; Tang, Shih-Hsuan; Nguyen, Chi Lang; Kuan, Ching-Wen; Yu, Hung-Wei; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
200510Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023Liao, YS; Lin, GR; Lin, CK; Chu, YS; Kuo, HC; Feng, M; 光電工程學系; Department of Photonics
2012成長磷化銦鎵材料於砷化鎵及鍺/矽基板上對三五族太陽能電池應用之研究邱道遠; Chiou, Dao-Yuan; 張翼; 馬哲申; Chang, Yi; Maa, Jer-Shen; 照明與能源光電研究所
1995n型磷化銦鎵之歐姆接觸研究陳經緯; Chen, Jing-Woei; 施 敏; Simon Min Sze; 電子研究所
1995Delta 摻雜磷化銦鎵/砷化銦鎵/砷化鎵調變摻雜場效電晶體之研究曾國權; Tzeng, Kuo-Chyuan; 施敏; Simon Min Sze; 電子研究所
2001高亮度發光二極體晶圓接合製程之研究侯智元; Chih-Yuan Hou; 吳耀銓; Yewchung Sermon Wu; 材料科學與工程學系
2000以低壓有機金屬化學汽相沉積法成長磷化銦鎵與砷化鎵異質結構之研究顧成芳; Gu Cheng-Fang; 張 翼; Edward Yi Chang; 材料科學與工程學系
1-Jun-2005Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrateLin, GR; Kuo, HC; Lin, CK; Feng, M; 光電工程學系; Department of Photonics
2003砷化鎵/磷化銦鎵異質結構介面的LP-MOCVD成長與研究及其在蝕刻阻障層的應用葉協鑫; Shien-Shin Yeh; 張翼; Edward Yi Chang; 材料科學與工程學系
2006Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate - art. no. 61190LLiao, Yu-Sheng; Lin, Gong-Ru; Kuo, Hao-Chung; Feng, Milton; 光電工程學系; Department of Photonics