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Issue DateTitleAuthor(s)
2015高效率奈米三族氮化物發光二極體之設計、磊晶成長分析與應用林大為; 郭浩中; 紀國鐘; Lin, Da-Wei; Kuo, Hao-Chung; Chi, Gou-Chung; 光電工程研究所
2016氮化鎵在圖形化4H-SiC基板上的磊晶陳柏霖; 吳耀銓; Chen,Bo-Lin; 材料科學與工程學系奈米科技碩博士班
23-Nov-2014Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor depositionLin, Pei-Yin; Chen, Jr-Yu; Shih, Yi-Sen; Chang, Li; 材料科學與工程學系; Department of Materials Science and Engineering
1-Oct-2010Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transitionLo, Shun-Tsung; Chen, Kuang Yao; Lin, T. L.; Lin, Li-Hung; Luo, Dong-Sheng; Ochiai, Y.; Aoki, N.; Wang, Yi-Ting; Peng, Zai Fong; Lin, Yiping; Chen, J. C.; Lin, Sheng-Di; Huang, C. F.; Liang, C. -T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014利用有機金屬化學氣相沉積成長氮化鋁/氮化鎵高電子遷移率電晶體許恩慈; Sheu, En Cih; 張翼; 馬哲申; 照明與能源光電研究所
2013以有機金屬化學氣相沉積於碳化矽基板上成長氮化鋁鎵/氮化鎵異質結構之高電子遷移率電晶體的應用黃士哲; Huang, Shih-Che; 張翼; Chang, Edward Yi; 材料科學與工程學系所
2011以二階段氫化物氣相磊晶法製作非極性氮化鎵基板之研究陳常臨; Chen, chan-lin; 李威儀; Lee Wei-I; 電子物理系所
2013利用有機金屬化學氣相沉積法 研究砷化鎵於矽基板上成核成長之技術潘文清和; PHAN, VAN THANH HOA; 張翼; Chang. Edward Yi; 材料科學與工程學系所
1-Oct-2010Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transitionLo, Shun-Tsung; Chen, Kuang Yao; Lin, T. L.; Lin, Li-Hung; Luo, Dong-Sheng; Ochiai, Y.; Aoki, N.; Wang, Yi-Ting; Peng, Zai Fong; Lin, Yiping; Chen, J. C.; Lin, Sheng-Di; Huang, C. F.; Liang, C. -T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics