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Issue DateTitleAuthor(s)
2003High density RF MIM capacitors using high-kappa AlTaOx dielectricsHuang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation processChan, KT; Chin, A; McAlister, SP; Chang, CY; Tseng, C; Liang, V; Chen, JK; Chien, SC; Duh, DS; Lin, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodesHuang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2003High-performance microwave coplanar bandpass and bandstop filters on Si substratesChan, KT; Chin, A; Li, MF; Kwong, DL; McAlister, SP; Duh, DS; Lin, WJ; Chang, CY; 電子工程學系及電子研究所; 電信工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Communications Engineering
1-Oct-2003Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2003Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation processChan, KT; Chin, A; Lin, YD; Chang, CY; Zhu, CX; Li, MF; Kwong, DL; McAlister, S; Duh, DS; Lin, WJ; 電子工程學系及電子研究所; 電信工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Communications Engineering
1-May-2003High-density MIM canpacitors using AlTaOx dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2003Fully silicided NiSi gate on La2O3 MOSFETsLin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2003Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETsYu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, SJ; Cho, BJ; Li, MF; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics