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Results 1-10 of 13 (Search time: 0.001 seconds).

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Issue DateTitleAuthor(s)
1998The effects of isoelectronic in-doping in GaN films grown by MOCVDShu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
1998Raman scattering in ternary AlAsxSb1-x filmsLin, HC; Ou, J; Hsu, CH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
3-Aug-1998Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor depositionShu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
1-Feb-1998Photoluminescence studies of GaN films of different buffer layer and doping concentrationShen, CC; Shu, CK; Lin, HC; Ou, J; Chen, WK; Lee, MC; Chen, WH; 電子物理學系; Department of Electrophysics
19-Feb-1998Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETsJong, FC; Huang, TY; Chao, TS; Lin, HC; Wang, MF; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1998Polarized X-ray absorption studies in double-thallium-layer superconductingChen, JM; Liu, RG; Liu, RS; Lin, HC; Uen, TM; Juang, JY; Gou, YS; 電子物理學系; Department of Electrophysics
1-Jul-1998Improving radiation hardness of EEPROM/flash cell by N2O annealingHuang, TY; Jong, FC; Chao, TS; Lin, HC; Leu, LY; Young, K; Lin, CH; Chiu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1998Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxyChen, WK; Lin, HC; Pan, YC; Ou, J; Shu, CK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
1-Jun-1998An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxyOu, J; Chen, WK; Lin, HC; Pan, YC; Lee, MC; 電子物理學系; Department of Electrophysics
2-Nov-1998Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxyLee, MC; Lin, HC; Pan, YC; Shu, CK; Ou, J; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics