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Results 1-10 of 16 (Search time: 0.004 seconds).

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Issue DateTitleAuthor(s)
1-Jan-1998Optical and structural properties of epitaxially lifted-off GaAs filmsFan, JC; Lee, CP; Tsai, CM; Wang, SY; Tsang, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1998A Gunn-diode active leaky-wave frequency scanning antennaLee, SH; Jou, CK; Lee, CP; Hu, CC; Wu, JJ; 傳播研究所; 電子工程學系及電子研究所; Institute of Communication Studies; Department of Electronics Engineering and Institute of Electronics
1998A CPW-to-Slotline active gunn diode leaky wave antennaLee, SH; Wu, JJ; Peng, ST; Hu, CC; Jou, CF; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1998Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologiesChuang, HF; Lee, CP; Tsai, CM; Liu, DC; Tsang, JS; Fan, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1998InGaAs/GaAs quantum dots on (111)B GaAs substratesTsai, FY; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1998Formation of D(-) centers in GaAs/AlGaAs quantum wellsLee, CH; Chang, YH; Lin, HH; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Dec-1998Spin-dependent electronic tunneling at zero magnetic fieldVoskoboynikov, A; Liu, SS; Lee, CP; 交大名義發表; National Chiao Tung University
1-Mar-1998Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrateFan, JC; Tsai, CM; Chen, KY; Wang, SY; Lin, G; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1998High-performance two-wavelength asymmetric Fabry-Perot modulator with a decoupled cavity designTsai, CM; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1998Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasersYen, ST; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics